GeP 磷化鍺晶體

Name: GeP 磷化鍺晶體2D Semiconductor
Brand: 其他品牌
Availability: InStock

簡(jiǎn)要描述：GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from （theoretically predicted） 1.68 eV of monolayer to 0.51 eV of bulk.

產(chǎn)品型號(hào)：2D Semiconductor
廠商性質(zhì)：生產(chǎn)廠家
更新時(shí)間：2026-04-09
訪問(wèn) 量：2200

產(chǎn)品咨詢聯(lián)系我們

產(chǎn)品分類(lèi)

二維材料

其他二維材料二維材料粉末二維材料溶液碲化物晶體硒化物晶體硫化物晶體絕緣體鈣鈦礦異質(zhì)結(jié) MOFS材料二維材料薄膜黑磷六方氮化硼查看全部產(chǎn)品

相關(guān)文章

詳細(xì)介紹

GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from (theoretically predicted) 1.68 eV of monolayer to 0.51 eV of bulk. GeP is an anisotropic semiconductor much similar to GaTe monoclinic structure. Our single crystal GeP (Germanium phosphide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. Please also see our GeS, GeSe, GeTe, GeAs, GeP, and Ge-based solutions.

Characteristics of vdW GeP crystals